Follow the frontier of charge-balanced power devices.
A research layer separating verified observations from interpretation. Every production record should carry publication date, source, architecture, evidence level and technology readiness.
Intrinsic polarization superjunctions
Nature Electronics reports intrinsic polarization superjunctions in III-nitride heterostructures, using spontaneous and piezoelectric polarization to form charge-balanced structures without intentional doping. The reported devices exceed 3.9 kV for Schottky diodes and 3.4 kV for transistors.
Read primary paper ↗4H-SiC SJ-HMOS
A 2026 study proposes a 4H-SiC superjunction MOSFET with an N-poly-Si/N-SiC heterojunction. Simulations report 1588 V breakdown, 2.02 mΩ·cm² specific on-resistance and reduced reverse-recovery charge.
Read study ↗SiC SJ commercialization
Industry reporting indicates active movement toward commercial SiC superjunction products, especially in 1200V+ classes. Treat individual commercial claims as provisional until confirmed by manufacturer primary documentation.
Industry overview ↗Evidence system
Every article should distinguish Primary evidence, Manufacturer claim, Independent analysis and Unverified market report. That distinction is central to the site's credibility.